Transistor 13003 datasheet

Update Time: May 19, Readership: Understanding the features and potential uses of this transistor will broaden your knowledge and improve your ability to effectively design and troubleshoot electronic systems. The MJE also known as transistor is a bipolar junction transistor BJT commonly used in electronic circuits, transistor 13003 datasheet.

All Transistors. Product profile1. Internal schemati. Internal schematic diagramThe device is manufactured. Internal schematic diagrammulti-epitaxi. It uses a Figure.

Transistor 13003 datasheet

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By using this site, you consent to the use of cookies. It has a maximum collector current of 20 Amperes and a collector-emitter voltage of Volts. Got it.

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Transistor 13003 datasheet

If you are looking for a high voltage transistor for your design with high switching speed then the might be a good choice. It is built with a special technology that makes this transistor stable and reliable to work on high voltages with very high speed switching capabilities. The device is capable of handling collector-emitter voltage of V DC and collector-emitter voltage of V DC which makes it ideal to use in wide variety of AC and DC high voltage applications. Although this device is built for high voltage and switching applications but can also be used for general purpose switching and amplification purposes. Additionally it can also be used for general purpose switching and amplification purposes and can also be used in battery operated projects and low voltage hobby and educational electronic projects. Long life and stable performance of a component in a circuit is also an important factor to think about when you are designing a circuit or if you are using it in an already designed circuit that you are assembling. The max load should not be increased more than 1. August 14, September 20,

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Page No. The collector of the transistor is connected to the positive power supply, and the load is connected between the collector and the positive power supply. Resistors R1, R2, and R3 are used to bias the transistor for proper operation. Package Packing T. All Transistors. They are particularly suited for andV switchmode applications such as Switching Regul. The transistor is subdivided into one group according to its DC current gain. Emitter Absol. Absolute Maximum RatingsSymbol Par. MJE Datasheet PDF The transistor datasheet contains more detailed product information such as pinout, different packages, more detailed applications, product lifetime, etc. EmitterGeneral DescriptionTOThis devices is designed for high voltage, high speed switchingcharacteristic,especially suitable for ba. Collector Current Ic : The maximum rated collector current is typically around 1. Operating Temperature Range. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. E May.

Update Time: May 19, Readership: Understanding the features and potential uses of this transistor will broaden your knowledge and improve your ability to effectively design and troubleshoot electronic systems. The MJE also known as transistor is a bipolar junction transistor BJT commonly used in electronic circuits.

The load is typically an AC device, such as a motor or a lamp, which receives the converted AC power. Package Type. Absolute Maximum Rat. Typically around 2 MHz. It belongs to the power transistor class, especially the NPN negative-positive-negative type. BASE 4. E Mar. All Transistors. Inverter Circuit Diagram In this circuit, the transistor is used as a key component in an inverter circuit that converts DC power to AC power. In this document where.